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SI6956DQ
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.09 @ VGS = 10 V 0.175 @ VGS = 4.5 V
ID (A)
"2.5 "1.8
D1
D2
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2
SI6956DQ
7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg
Symbol
VDS VGS
Limit
20 "20 "2.5 "2.0 "20 1.25 1.0
Unit
V
A
W 0.64 -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70173 S-00652--Rev. E, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600
Symbol
RthJA
Limit
125
Unit
_C/W
2-1
SI6956DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 1.8 A VDS = 15 V, ID = 2.5 A IS = 1.25 A, VGS = 0 V 14 0.065 0.100 5 0.8 1.2 0.09 0.175 W S V 1.0 "100 1 25 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.25 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 10 V RG = 6 W A V, VDS = 10 V, VGS = 10 V ID = 2.5 A V V, 25 7 0.9 2.1 11 11 16 6 45 20 20 30 15 70 ns 10 nC C
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
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2-2
Document Number: 70173 S-00652--Rev. E, 27-Mar-00
SI6956DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 6V 16 I D - Drain Current (A) 16 I D - Drain Current (A) TC = -55_C 25_C 12 125_C 20
Transfer Characteristics
VGS = 10, 9 ,8 ,7 V 5V
12
8 4V 4 3V 0 0 1 2 3 4 5
8
4
0 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.30 1000
Capacitance
0.25 r DS(on) - On-Resistance ( ) C - Capacitance (pF) VGS = 4.5 V
800
0.20
600 Coss 400 Ciss 200 Crss 0
0.15
0.10 VGS = 10 V 0.05
0 0 2 4 6 8 10
0
4
8
12
16
20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
10 VGS = 10 V ID = 2.5 A
Gate Charge
2.0
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 2.5 A
V GS - Gate-to-Source Voltage (V)
r DS(on) - On-Resistance ( ) (Normalized) 0 1 2 3 4 5 6 7 8
8
1.5
6
1.0
4
0.5
2
0
0 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600
Document Number: 70173 S-00652--Rev. E, 27-Mar-00
2-3
SI6956DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( ) 0.32 0.40
On-Resistance vs. Gate-to-Source Voltage
0.24
ID = 2.5 A
TJ = 25_C
0.16
0.08
1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.00 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
1.0
Threshold Voltage
120
Single Pulse Power
100 0.5 V GS(th) Variance (V) 80 0.0 Power (W) ID = 250 A
60
40 -0.5 20
-1.0 -50
0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05
PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W
0.02 Single Pulse 0.01 10-4
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10-3
10-2
10-1
1
10
30
Square Wave Pulse Duration (sec)
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2-4
Document Number: 70173 S-00652--Rev. E, 27-Mar-00

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